发明人赵玉洁,杨光,沈红梅. "Method for the Synthesis of Ondansetron EP Impurity D" [P]. 中国发明专利, 专利号 CN 115272956 A, 授权公告日 2016-06-21.
发明人胡光,罗永刚,杨光. "A Process for Preparing High-Purity Ondansetron EP Impurity D" [P]. 中国发明专利, 专利号 CN 108177673 A, 授权公告日 2021-08-14.
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